With the rapid development of semiconductor technology, silicon carbide (SiC), as a semiconductor material with excellent physical and chemical properties, has shown great application potential in the field of high-performance electronic devices. However, to give full play to the advantages of SiC materials, the preparation of high-quality silicon carbide substrate is a crucial part. This paper aims to discuss the fine preparation process of SiC substrate, through a series of precise process steps to ensure that the final SiC substrate can meet the strict requirements of high-performance electronic devices.

 

 

1. Initial treatment: smooth and round

The SiC crystals obtained after the single crystal growth process must first be smoothed to eliminate surface unevenness and growth defects. This step provides a good basis for subsequent processing.

Then a rolling process is carried out to smooth the edge of the crystal anchor, creating favorable conditions for the cutting operation and reducing the risk of breakage during the cutting process.

 

2. Cutting and thinning

Using precision cutting technology, the SiC crystals are divided into multiple sheets, which will become the raw material for the SiC substrate.

The cut sheet is then ground to be thinned to the desired specification while ensuring the thickness uniformity of the substrate.

 

3. Surface quality improvement: mechanical polishing and chemical mechanical polishing

Mechanical polishing technology is used to further improve the smoothness of the substrate surface and remove the damaged layer that may occur during grinding.

The chemical mechanical polishing (CMP) process further improves the flatness and cleanliness of the substrate surface, and achieves higher surface quality through the synergistic effect of chemistry and machinery.

 

4. Cleaning and testing

The polished SiC substrate needs to be thoroughly cleaned to remove the residual polishing liquid and particles on the surface to ensure the cleanliness of the substrate.

Finally, the SiC substrate is tested comprehensively, including surface quality, thickness uniformity, defect density and other key indicators, to ensure that the substrate meets the manufacturing requirements of high-performance electronic devices.

 

Through the above series of precise process steps, the fine preparation process of SiC substrate can be completed. From the initial grinding and rounding, to the cutting and thinning, to the improvement of the surface quality and the final cleaning and inspection, each step is crucial and together form the complete chain of high-quality SiC substrate preparation. The strict execution and continuous optimization of these process steps provide a solid foundation for the manufacture of high-performance semiconductor devices, and promote the wide application and development of SiC materials in the field of high-performance electronic devices. In the future, with the continuous progress and innovation of technology, the preparation process of SiC substrate will be more perfect, and new vitality will be injected into the sustainable development of semiconductor industry.

With the wide application of silicon carbide (SiC) in semiconductor devices, the quality requirements of silicon carbide substrates are becoming more and more stringent. SiC devices have strict regulations on the surface thickness change, surface roughness (Ra), machining damage and residual stress of the liner film. However, the SiC substrate after cutting and stripping often has problems such as damaged layer, high surface roughness and poor flatness. These problems must be solved by effective flattening process to obtain high quality polished sheet for subsequent epitaxy process. This article will focus on the grinding and grinding technology in the SiC substrate flattening process, and compare and analyze their advantages and disadvantages.

 

 

1. Current situation and limitation of grinding process

 

The grinding process has a high share of the market, including two stages of rough grinding and fine grinding, and requires single-side mechanical polishing (DMP) before chemical mechanical polishing (CMP). Its advantage is that the cost is relatively low, but there are disadvantages such as cumbersome processes, low automation level, high fragmentation risk, low flexibility and certain impact on the environment.

 

 

2. Advantages and adaptability of grinding process

 

The grinding process, as an alternative to the grinding process, provides higher material removal rates and better control of wafer thickness and flatness. It uses different abrasives and grinding techniques, such as diamond grinding wheels, to achieve a finer and more uniform surface treatment. The grinding process is excellent in terms of automation and flexibility, suitable for single chip processing, and can better adapt to the processing needs of large-size wafers.

 

 SiC substrate flattening process diagram

 

The grinding process usually includes two stages of coarse grinding and fine grinding, and the damaged layer of the substrate surface is gradually removed by different particle sizes of the abrasive material to improve the surface smoothness. However, the process has many problems. First of all, the process is more complicated, from rough grinding to fine grinding to DMP and CMP, requires multiple steps, increasing the processing time and cost. Secondly, the level of automation is not high, resulting in low production efficiency. For large wafers, there is a high risk of fragmentation due to mechanical stress during processing. In addition, the flexibility of the grinding process is low, which is not conducive to single chip processing, and the use of grinding fluid has a certain impact on the environment.

 

The grinding process uses highly efficient abrasives such as diamond wheels to achieve rapid flattening of SiC substrates with higher material removal rates. Compared with grinding process, grinding process has the following advantages: first, high degree of automation, can significantly improve production efficiency; The second is good flexibility, suitable for single piece processing, can be customized according to different needs; Third, it can better adapt to the processing needs of large-size wafers and reduce the risk of fragmentation. In addition, the grinding process enables a finer and more uniform surface finish, providing a better substrate for subsequent CMP processes.

 

In summary, the grinding and grinding techniques in the SiC substrate flattening process have their advantages and disadvantages. Although the grinding process cost is low, but the process is cumbersome, the level of automation is not high, the risk of fragmentation is high and the flexibility is low, which limits its further development. In contrast, the grinding process shows obvious advantages in terms of automation, flexibility, material removal rate and surface treatment quality, which is more suitable for the high-quality requirements of SiC substrates in the modern semiconductor industry. Therefore, with the continuous progress of semiconductor technology, grinding process is expected to become the mainstream technology of SiC substrate flattening. In the future, grinding process parameters should be further optimized to improve processing efficiency and quality to meet the increasingly stringent substrate requirements of SiC devices.

With the continuous progress of semiconductor technology, silicon carbide (SiC), as a high-performance material, has shown great application potential in the field of power electronic devices. However, in the preparation process of silicon carbide substrate, surface quality control is particularly critical, especially after thinning, grinding and polishing and other processes to obtain ultra-smooth surface. Among them, chemical mechanical polishing (CMP), as one of the key steps, is of great significance for removing the damaged layer left by the previous process and achieving high surface levelling. However, the traditional CMP process faces the problem of low material removal rate (MRR), which directly affects the production efficiency and cost. Therefore, exploring new technologies to improve the CMP efficiency of SiC substrate has become the focus of current research.

 

 

1. Basic principles and challenges of SiC substrate CMP

The surface damage depth of the thinned or ground SiC substrate is usually 2-5μm and requires further treatment by CMP.

CMP technology is based on the "chemical + mechanical" composite principle, through the combination of oxide layer formation and mechanical removal, to achieve surface smoothing.

 

2. Low MRR is the main problem of SiC substrate CMP, and the CMP efficiency of SiC is significantly lower than that of silicon substrate.

The impact of low MRR on production efficiency and cost:

Lower MRR results in longer time consuming SiC substrate CMP steps, increasing processing time and cost.

Even if the existing CMP method can produce qualified 4H-SiC substrate, low efficiency is still the bottleneck restricting its large-scale application.

 

CMP polishing process

 

3. Technical progress to improve CMP efficiency:

To meet the low MRR challenge, the industry has developed double-sided, batch polishing technology.

These advanced technologies have significantly reduced CMP man-hours, such as the CMP polishing time for a single batch of 10 substrates from 3-5 hours to 1 hour.

Double-sided polishing technology not only improves efficiency, but also helps maintain consistency and flatness on both sides of the substrate.

 

 

In summary, the improvement of chemical-mechanical polishing efficiency of silicon carbide substrate is the key to promote its wide application. Through the development of advanced technologies such as double-sided and batch polishing, the problem of low material removal rate in the traditional CMP process is effectively solved, the processing time is significantly shortened, and the production cost is reduced. In the future, with the continuous improvement of the performance requirements for SiC materials and the continuous innovation of polishing technology, we have reason to believe that the preparation of SiC substrates will be more efficient and economical, laying a solid foundation for the further development of power electronic devices. Therefore, the continuous exploration and optimization of CMP process will be an important way to promote the wide application of SiC materials in the semiconductor field.

Because of its excellent mechanical properties, thermal stability and chemical inertness, alumina substrate has shown wide application potential in electronic packaging, thermal management and high-performance structural parts. The preparation process involves complex process steps, in which casting process, as the core link, plays a decisive role in the performance of the final product. This paper aims to discuss the key control points in casting process, such as raw material formula, casting film strip thickness and sintering process parameters, analyze how these parameters affect the thickness uniformity, appearance quality and surface roughness of alumina ceramic substrate engineering application indicators, so as to optimize the preparation process and improve the overall performance of the product.

 

 

Raw material formulation and slurry characteristics

The raw material formula is the basis of alumina ceramic substrate preparation, which directly affects the viscosity, solid content and other key physical properties of the slurry. Suitable slurry formulation helps to achieve good casting effect and uniform film distribution. The viscosity of the slurry should be moderate, which can ensure good spreading and avoid cracks or deformation during the drying process.

 

 

Casting film thickness control

The thickness of the cast film strip is a key factor in determining the final thickness tolerance of the substrate. In addition to the slurry state, the height of the casting blade also directly affects the thickness of the dry film. The thickness distribution of the film can be optimized by precisely controlling the height of the blade and the velocity of the film (uniform linear motion), and the phenomenon of thick center and thin sides can be reduced. For the substrate requiring high precision, the casting machine with adjustable blade surface curve becomes a necessary choice.

 

 

Desticking sintering process parameters

Debonding sintering is a key step in the preparation of alumina ceramic substrate, which directly affects the density, strength and microstructure of the substrate. Reasonable sintering temperature and holding time are helpful to eliminate the internal pores and improve the mechanical properties and thermal stability of the substrate. At the same time, the atmosphere control in the process of debonding is also an important factor affecting the quality and performance of the substrate.

 

Casting process flow chart

 

In summary, the preparation process of alumina ceramic substrate is a complex system engineering involving multi-factors and multi-steps. The rational selection and optimization of key control points such as raw material formula, casting film thickness and sintering process parameters are very important to improve the thickness uniformity, appearance quality and surface roughness of the substrate. Through in-depth study of the mechanism of influence of these parameters, combined with advanced preparation technology and equipment, the overall performance of alumina ceramic substrates can be further improved to meet the stringent requirements in high-performance electronic packaging, thermal management and structural components. In the future, with the continuous progress of material science and preparation technology, the preparation process of alumina ceramic substrate will be more refined and intelligent, providing a more solid foundation for the development of related fields.

Silicon carbide substrate, as a new generation of semiconductor products, has shown great application potential in the field of power electronic devices because of its excellent physical and chemical properties. However, high efficiency and low loss cutting of SiC ingot is one of the key technologies restricting its mass production. At present, mortar wire cutting and diamond wire cutting are the two mainstream technologies in SiC ingot cutting, and they have significant differences in the ways of abrasive introduction, processing efficiency, material loss and environmental impact. This article aims to compare and analyze the characteristics of these two cutting technologies, and discuss the optimization direction of SiC cutting process.

 

 

1. Abrasive import mode and processing efficiency

· mortar wire cutting: using free abrasive, the processing speed is relatively slow.

· diamond wire cutting: through electroplating, resin bonding and other methods to fix the abrasive particles, cutting speed increased by more than 5 times, significantly improve production efficiency.

2. Material loss and film output rate

· mortar wire cutting: low output rate, large material loss.

· diamond wire cutting: the output rate is increased by 15% to 20%, the material loss is significantly reduced, and the economic benefit is improved.

3. Environmental protection advantages

· Diamond wire cutting: Less waste and wastewater production, more environmentally friendly.

4. Technical challenges and coping strategies

· Diamond wire cutting: There are challenges in crystal control and cutting loss control.

· Coping strategy: The current industry adopts the strategy of mortar wire cutting as the main and diamond wire cutting as the auxiliary, the use ratio is about 5:1. In the future, it is necessary to further optimize the diamond wire cutting technology to improve its competitiveness in SiC cutting.

5. Processing loss analysis of SiC materials

· mortar wire cutting loss:

· Notch loss: up to 150-200 microns.

· Polishing loss: Surface damage needs to be repaired by rough grinding, fine grinding and CMP processes.

· back thinning loss: The initial thickness setting is high, the back thinning is required to reduce resistance.

 

 SiC cutting loss and damage

 

In summary, the diamond wire cutting technology in the cutting of SiC ingot shows significant processing speed advantages, lower material loss and environmental protection advantages, but its crystal control and cutting loss control still need to be further optimized. At present, the complementary use strategy of mortar wire cutting and diamond wire cutting is a common practice in the industry. In the future, with the continuous progress of diamond wire cutting technology and the reduction of costs, it is expected to occupy a dominant position in the SiC cutting field. At the same time, in view of the loss problem in the processing of SiC materials, it is necessary to further explore more efficient and low-loss cutting and polishing processes to promote the efficient and low-cost production of SiC semiconductor materials and promote its wide application in the field of power electronic devices.

In the rapidly developing electronics industry, alumina substrate has become an indispensable substrate for electronic components with its excellent insulation properties, chemical stability, high thermal conductivity and good high-frequency characteristics. It not only provides support for electronic components, but also plays a key role in heat dissipation and insulation. However, the preparation process of high quality alumina ceramic substrate is complex and fine. The key factors such as raw material formula, casting film thickness and sintering process parameters directly affect the thickness uniformity, appearance quality and surface roughness of the product, and then determine the overall performance of the product. In this article, the effects of three key additives, binder, plasticizer and dispersant, and their process control were discussed in order to provide reference for optimizing the preparation process of alumina ceramic substrate.

 

 

Selection of binder and control of additive amount

As a key organic additive for the construction of three-dimensional networks of ceramic sheets, binders must be soluble in selected solvents, and common types include polyethylene, polyvinyl alcohol, etc. The effect of the appearance, processing characteristics and porosity of the casting green billet on the performance of the product should be considered comprehensively when the amount of binder added. The proper amount of binder can ensure the strength and toughness of green billet, but too much binder will lead to the difficulty of degreasing and the decrease of green billet density, which will affect the shrinkage rate and mechanical properties of finished product. Too little can not effectively bond the powder.

 

Introduction and balance of plasticizers

By reducing the plastic limit temperature of the binder, the plasticizer enhances the flexibility and workability of the cast film, solves the problem of insufficient toughness after drying, and improves the stability of the slurry. However, the addition of plasticizers should be moderate to avoid excessive reduction of film strength. The ideal plasticizer should have stable physicochemical properties that are compatible with other ingredients of the paste, ensuring minimal addition while maintaining performance.

 

Common binders correspond to plasticizers

 

Selection and dose adjustment of dispersant

The good dispersion of powder in slurry is the basis of preparing high quality alumina ceramic substrate. The dispersing agent promotes the suspension of particles through electrostatic and steric hindrance and stably disperses. Depending on the slurry system, it is important to choose the right type of dispersant (such as inorganic, organic, polymer and composite dispersant). The amount of dispersant added is adjusted according to the size of the alumina powder, and fine particles usually need more dispersant because of their high surface energy.

 

In summary, the selection and process control of binder, plasticizer and dispersant have a decisive influence on the performance of the final product during the preparation of alumina ceramic substrate. The thickness uniformity, appearance quality and surface roughness of alumina ceramic substrate can be effectively improved by precisely regulating the types and amounts of these additives, combined with the optimized casting film thickness and desviscose sintering process parameters, so as to ensure its excellent performance in electronic components. In the future, with the continuous progress of material science and preparation technology, further optimization of additive formulation and process parameters will open up new possibilities for the application of alumina ceramic substrates in a wider range of fields.

Discover Performance Advantages & Applications of ATCERA Silicon Carbide Tubes

In the rapidly developing modern industry, silicon carbide (SiC) material has become one of the core materials in the field of high temperature industry because of its unique physical and chemical properties. Silicon carbide tubes under the ATCERA brand, with its excellent high-temperature resistance, wear resistance, corrosion resistance and other characteristics, show a wide range of application potential in many industries. The purpose of this paper is to explore the performance advantages of ATCERA silicon carbide tubes and analyze their innovative applications in improving transport efficiency.

 

Performance Advantages of Silicon Carbide Tubes by ATCERA

ATCERA silicon carbide tubes have significant high-temperature resistance and can withstand high temperature environments up to 1600 ° C without deformation or failure. At the same time, its excellent wear and corrosion resistance ensure the long-term stable operation of the tube under harsh conditions. The high hardness and high strength characteristics of silicon carbide make the tube body not easy to break and greatly extend the service life. In addition, the silicon carbide tube also has good thermal conductivity and high thermal shock performance, which can quickly respond to temperature changes and maintain the stability of product quality.

 

Electrical Characteristics & High-Frequency Applications of SiC Tubes

In addition to excellent physical properties, ATCERA silicon carbide tubes also exhibit good electrical characteristics. Its high input impedance, low noise and good linearity make it one of the rapidly developing silicon carbide accessories and the first to achieve commercial applications. The unipolar operating characteristics of silicon carbide tubes give them excellent performance in high frequency applications. However, due to the better stability and reliability of SiC structures at high temperatures, the threshold voltage is usually negative, that is, the normally on state, which is not conducive to power electronics applications and is not compatible with current general-purpose drive circuits. To solve this problem, ATCERA introduced the channel injection device technology to develop the enhanced device in the normally closed state. Although enhanced devices sacrifice some positive on-resistance characteristics, normally open (depletion) devices are easier to achieve higher power density and current capacity, while depletion devices can be cascaded to achieve the operating state.

 

Silicon Carbide Tubes' Versatile Industrial Applications

ATCERA silicon carbide tubes are notable for their wide range of applications. In the solar power generation, semiconductor and piezoelectric crystal industries, silicon carbide tubes are used to cut 3-12 inches of monocrystalline silicon, polysilicon, potassium arsenide, quartz crystals and other materials. In addition, it is used in circuit components, high temperature applications, ultraviolet detectors, building materials, astronomy, disc brakes, clutches, diesel particulate filters, filament pyrometers, ceramic films, cutting tools, thermal components, nuclear fuel, gems, steel, armor and catalysts. The wide application of silicon carbide tube not only reflects its excellent performance, but also highlights its irreplaceability in modern industry.

 

Challenges & Solutions for Efficient SiC Tube Transportation

Although the silicon carbide tube has many advantages, in some industrial areas, such as medium frequency furnace forging, non-ferrous metal smelting and chemical industry, due to the large weight of the furnace tube, the need for transportation, and the existing conveying equipment is insufficient, resulting in the uniform conveying efficiency of the furnace tube has become a major challenge. In order to improve the efficiency of transportation, ATCERA is developing new transportation equipment and technologies, such as automated transportation systems, optimized transportation routes and increased transportation capacity. At the same time, by improving the manufacturing process and material of silicon carbide tube, its weight is reduced, so as to improve the transportation efficiency.

 

In summary, ATCERA silicon carbide tube with its excellent performance characteristics, in the high-temperature industrial field has shown a wide range of application prospects. Through continuous technological innovation and optimization, ATCERA will further improve the performance of silicon carbide tubes, and is committed to solving the challenges of transport efficiency and other aspects, contributing to the development of modern industry. In the future, with the continuous progress of technology and the continuous expansion of the market, ATCERA silicon carbide tubes will play an important role in more fields, promoting the continuous development and innovation of the high temperature industry.

Discover ATCERA's High-Performance Silicon Carbide Tubes for Industrial Use

 

In the rapidly evolving industrial sector, the choice of materials is critical to improving equipment performance, extending service life and ensuring productivity. As a leading supplier of Silicon Carbide materials, ATCERA is focused on providing high performance sintered alpha silicon carbide (SiC) products, especially its carefully crafted silicon carbide tubes, which demonstrate a wide range of application potential in multiple industrial sectors due to their superior physical and chemical properties. This paper will deeply discuss the unique advantages and specific application scenarios of ATCERA silicon carbide tube in industrial and sintering applications.

 

 

The Preparation Process and Characteristics of ATCERA Silicon Carbide Tubes

ATCERA silicon carbide tube is made of high quality alpha silicon carbide powder, mixed with non-oxide sintering agent through fine ratio, sintered in vacuum or inert atmosphere at high temperature of 2000°C to 2600°C. This process ensures an extremely high density and fine grain structure of the product. Through a variety of molding technologies including casting, dry pressing, extrusion, isostatic pressing and injection molding, ATCERA is able to produce silicon carbide tubes and components with complex shapes and precise dimensions. These processes not only enrich the form of the products, but also give them excellent surface finish and strict dimensional control with no or minimal post-sintering treatment.

 

The Diverse Application Fields of ATCERA Silicon Carbide Tubes

Wear and corrosion resistant components in the power industry: silicon carbide tubes are the ideal choice for the power industry because of their excellent wear and corrosion resistance, and are used to manufacture pipes and components that withstand high wear and corrosion environments, effectively extending the life of equipment.

 

Anti-corrosion components for the chemical and paper industry: In the chemical and paper industry, ATCERA silicon carbide tubes, thanks to their excellent chemical stability, can effectively resist the erosion of various corrosive media, ensuring the continuity and safety of the production process.

 

Oil extraction components for oil drilling: In the field of oil drilling, which works under extreme conditions, silicon carbide tubes are widely used in oil well extraction equipment due to their high strength and high temperature resistance, which improves the efficiency of oil extraction.

 

Automotive components and mechanical seals: In the automotive industry, ATCERA silicon carbide tubes are used to manufacture high-performance mechanical seals and rings that significantly enhance the durability and reliability of automotive engines and drivetrains.

 

Heat exchange tube: Using the high thermal conductivity and low thermal expansion coefficient of silicon carbide, ATCERA silicon carbide tube has become the preferred material for efficient heat exchange system, and is widely used in various heat exchange equipment to improve energy efficiency.

 

Structural materials in the semiconductor industry: In the semiconductor manufacturing process, silicon carbide is used as structural materials and crucible because of its excellent high temperature resistance and corrosion resistance, to ensure the purity of semiconductor materials and the stability of the processing process.

 

In summary, ATCERA silicon carbide tube with its unique preparation process, excellent physical and chemical properties and a wide range of applications, has become a key material to promote technological progress in many industrial fields. From power to chemicals, from oil drilling to automotive manufacturing, to the semiconductor industry, ATCERA silicon carbide tubes continue to meet the market demand for high-performance materials with their excellent performance, leading the innovation and development of materials science. In the future, with the continuous progress of technology and the continuous expansion of applications, ATCERA silicon carbide tubes will show their unlimited potential in more fields and contribute to industrial upgrading and scientific and technological progress.

With the rapid development of science and technology and the continuous improvement of quality of life, the performance and safety requirements of cutting tools are also increasing. Under this background, zirconia ceramic blades have become a bright new star in the field of cutting tools because of their unique physical and chemical properties and wide application prospects. This paper will deeply discuss the characteristics, types and applications of zirconia ceramic cutting tools in various fields, in order to provide reference for further research and development in this field.

 

The Significant Characteristics of ZrO2 Ceramic Blades

 

Zirconia ceramic cutting tools stand out among many cutting tools for their high strength, wear resistance, no rust, no oxidation, acid and alkali resistance, anti-static and no reaction with food. These characteristics make the zirconia ceramic tool can effectively resist the erosion of various harsh environments while maintaining the sharpness, thus extending the service life.

 

The Type and Application of ZrO2 Ceramic Blades

 

Zirconia ceramic table knife: With its glossy jade appearance and excellent hygiene properties, zirconia ceramic table knife is the ideal choice for modern home kitchens. It can not only easily cope with the cutting needs of various ingredients, but also effectively prevent food contamination and ensure food safety.

 

Zirconia ceramic scissors: In the field of fine cutting and craft production, zirconia ceramic scissors with its sharp edge and durable sharpness, has won widespread praise. Whether it is paper cutting, cloth or other fine materials, zirconia ceramic scissors can be easily dealt with and improve work efficiency.

 

Zirconia ceramic razor: In the field of personal care, zirconia ceramic razor with its sharp edge and comfortable shaving experience, has become the first choice for men. It eases shaving while reducing skin irritation and making the shaving process more enjoyable.

 

Zirconia ceramic scalpel: In the medical field, zirconia ceramic scalpel with its sterile, sharp, corrosion resistance characteristics, has become a useful assistant in surgery. It can not only improve the efficiency of operation, but also effectively reduce the risk of postoperative infection and ensure the life safety of patients.

 

Future Development of ZrO2 Ceramic Blades

With the continuous progress of material science and manufacturing technology, the performance of zirconia ceramic tools will be further improved. In the future, we can look forward to the emergence of sharper, durable and environmentally friendly zirconia ceramic tools to meet the needs of more fields. At the same time, with the continuous improvement of people's pursuit of quality of life, zirconia ceramic tools will also become more people's preferred cutting tools.

 

In summary, ZrO2 ceramic blades with its unique physical and chemical properties and a wide range of application prospects, has become a leader in the field of cutting tools. It not only has high strength, wear resistance, no rust and other characteristics, but also effectively prevents food contamination and postoperative infection and other risks. With the continuous progress of science and technology and the continuous improvement of people's needs, it is believed that zirconia ceramic tools will play a more important role in the future, bringing more convenience and beauty to our lives.

The preparation of alumina substrate is a multi-step process with high precision, in which the choice of solvent directly affects the homogeneity of slurry, drying efficiency and physical properties of the final product. The solvent must not only be able to quickly dissolve each component to form a stable slurry, but also need to have rapid volatilization characteristics to ensure efficient drying of green billets, thereby improving the overall production efficiency. However, a single solvent is often difficult to meet all process requirements, especially the requirements of gradient temperature drying, which can lead to defects such as stress cracking or surface peeling.

 

Therefore, when selecting the solvent, it is necessary to consider its solubility, volatility and influence on the subsequent process. In practice, a combination of solvents, such as water, ethanol, toluene, trichloroethane and acetone, is often used to balance solubility, volatilization rate and process adaptability, so as to optimize the drying process, reduce the occurrence of defects, and ensure high-quality preparation of alumina  substrates.

 

 

Preparation Process

The preparation process of alumina ceramic substrate is complex and fine, including several key steps. First, through the casting process, the alumina slurry with a certain viscosity is uniformly coated on the film belt to form a continuous film. Next, dry cutting is performed, where the wet film is dried and cut to the desired size. Subsequently, the multi-layer lamination is carried out, and the multi-layer alumina film is superimposed together to form a multi-layer structure. After the multi-layer laminated sheet, isothermal static pressing treatment is carried out, by applying a certain pressure and temperature, the multi-layer film is tightly combined to form a stable green. Finally, the green billet is sintered to melt and rearrange the alumina particles at high temperatures to form a dense, hard ceramic substrate. The entire preparation process requires strict control of various parameters to ensure the quality and performance of the final product.

 

The Role and Challenges of Solvents in the Preparation Process

Solvent plays an important role in the preparation of alumina ceramic substrate. First, the solvent dissolves alumina particles and other additives to form a uniform slurry that provides the necessary fluidity for subsequent casting processes. Secondly, the volatility of the solvent has an important impact on the drying speed and production efficiency. The fast volatile solvent can evaporate quickly, speeding up the drying process and improving production efficiency. However, the choice of solvents also faces many challenges. A single organic solvent often can not meet the requirements of gradient temperature drying process, which is easy to cause stress cracking and slurry surface peeling problems. This is because of the differences in the volatility, solubility and dispersion of alumina particles of different solvents, and a single solvent cannot perform the best performance in all process stages. Therefore, it is necessary to consider the various properties of the solvent and select a suitable solvent combination to optimize the drying process and reduce the occurrence of defects.

 

 

Solvent Selection Strategy

Aiming at the challenges of solvent in the preparation process, the following solvent selection strategies were proposed: First, according to the preparation process requirements and target properties of alumina ceramic substrate, the solvent with suitable volatility, solubility and dispersion was selected. Secondly, the interactions and synergies between solvents are considered, and different solvents are used in combination to optimize the overall performance. For example, a combination of solvents such as water, ethanol, toluene, trichloroethane, and acetone can be used to balance solubility, evaporation rate, and process adaptability. In practical applications, it is also necessary to test and optimize according to the specific situation to determine the best solvent combination and process parameters. Through reasonable solvent selection strategy, the preparation efficiency and quality of alumina ceramic substrate can be significantly improved, which provides strong support for the development of electronics industry.

Solvent selection	Diaphragm state
Anhydrous ethanol	Affected by the environment, the slurry is easy to conjunctiva and the casting film is easy to crack.
Ethyl acetate	The solid content is low and the membrane surface condition is not good.
Butyl acetate	The solid content is low and the surface condition of the diaphragm is not good.
xylene	High boiling point, but toxic, low solid content, poor film formation state.
Anhydrous ethanol + ethyl acetate	High solid content and good diaphragm condition.
Anhydrous ethanol + butyl acetate	High solid content and good diaphragm condition.
Anhydrous ethanol + xylene	High solid content and good diaphragm condition.
Xylene + butyl acetate	Low solid content and poor membrane condition.

 

In summary, solvent selection and process optimization play a crucial role in the preparation of alumina ceramic substrate. Through the reasonable selection of solvents and their combinations, not only can effectively improve the uniformity and drying efficiency of the slurry, but also significantly reduce the defects in the production process to ensure the excellent performance of the final product. In the future, with the continuous development of the electronics industry, the requirements for alumina ceramic substrates will be more stringent, and in-depth research on the mechanism of solvent action and exploration of more efficient and environmentally friendly preparation processes will be the key to promote continuous progress in this field. Through continuous scientific and technological innovation and process optimization, we have reason to believe that alumina ceramic substrates will play an irreplaceable role in a wider range of fields and contribute to the prosperity of the electronics industry.